Cmos CMD65R450

Cmos · FETs & Power MOSFETs · MPN CMD65R450

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)870pF
TypeN-Channel

Technical details

N-Channel 650V 11A 80W Surface Mount TO-252

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