Cmos CMD6411

Cmos · FETs & Power MOSFETs · MPN CMD6411

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Specifications

Gate Charge(Qg)235nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)7.2nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)5.5nF
RDS(on)4.7mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)12.5nF
TypeP-Channel

Technical details

P-Channel 20V 100A 70W Surface Mount TO-252

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