Cmos CMD60R180S6ZD

Cmos · FETs & Power MOSFETs · MPN CMD60R180S6ZD

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)28.6nC
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

600V 20A 4.5V 75W 160mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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