Cmos CMD603B

Cmos · FETs & Power MOSFETs · MPN CMD603B

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Specifications

Gate Charge(Qg)17.5nC@10V
ConfigurationCommon Drain
Drain to Source Voltage60V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
RDS(on)105mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)910pF

Technical details

N-Channel+P-Channel Array 60V 13A 42W Surface Mount TO-252-4L

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