Cmos CMD603

Cmos · FETs & Power MOSFETs · MPN CMD603

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Specifications

Gate Charge(Qg)8nC@10V;16nC@10V
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V;1V
Pd - Power Dissipation27W;43W
Reverse Transfer Capacitance (Crss@Vds)42pF;49pF
RDS(on)75mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)860pF;1.55nF

Technical details

N-Channel+P-Channel Array 60V 13A 27W 43W Surface Mount TO-252-4L

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