Cmos · FETs & Power MOSFETs · MPN CMD510B
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| Gate Charge(Qg) | 14nC@10V;15nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 14A;10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V;3V |
| Pd - Power Dissipation | 35W;32W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;25pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF;1.4nF |
N-Channel+P-Channel Array 100V 14A 10A 35W 32W Surface Mount TO-252-4L