Cmos CMD510B

Cmos · FETs & Power MOSFETs · MPN CMD510B

No reviews yet — be the first to review Cmos CMD510B.

Specifications

Gate Charge(Qg)14nC@10V;15nC@10V
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)14A;10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V;3V
Pd - Power Dissipation35W;32W
Reverse Transfer Capacitance (Crss@Vds)27pF;25pF
RDS(on)200mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.2nF;1.4nF

Technical details

N-Channel+P-Channel Array 100V 14A 10A 35W 32W Surface Mount TO-252-4L

Related FETs & Power MOSFETs