Cmos CMD50P06

Cmos · FETs & Power MOSFETs · MPN CMD50P06

No reviews yet — be the first to review Cmos CMD50P06.

Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.85nF

Technical details

P-Channel 60V 50A 85W Surface Mount TO-252

Related FETs & Power MOSFETs