Cmos CMD3N50M

Cmos · FETs & Power MOSFETs · MPN CMD3N50M

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)25pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)2.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 500V 3A 60W Surface Mount TO-252

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