Cmos CMD30N10

Cmos · FETs & Power MOSFETs · MPN CMD30N10

No reviews yet — be the first to review Cmos CMD30N10.

Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage100V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)35mΩ
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 100V 30A 60W Surface Mount TO-252

Related FETs & Power MOSFETs