Cmos CMD160N10

Cmos · FETs & Power MOSFETs · MPN CMD160N10

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Specifications

Gate Charge(Qg)25.6nC
Drain to Source Voltage100V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)860pF
TypeN-Channel

Technical details

N-Channel 100V 55A 100W Surface Mount TO-252

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