Cmos CMD12P10S

Cmos · FETs & Power MOSFETs · MPN CMD12P10S

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)170mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
TypeP-Channel

Technical details

P-Channel 100V 9A 40W Surface Mount TO-252

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