Cmos CMD12P10B

Cmos · FETs & Power MOSFETs · MPN CMD12P10B

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage100V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)280mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF
TypeP-Channel

Technical details

P-Channel 100V 12A 75W Surface Mount TO-252

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