Cmos CMD079N10

Cmos · FETs & Power MOSFETs · MPN CMD079N10

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Specifications

Output Capacitance(Coss)990pF
Pd - Power Dissipation100W
Configuration-
Gate Charge(Qg)41nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)7.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)60pF
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

N-Channel 100V 80A 100W Surface Mount TO-252

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