Cmos CMD060N10

Cmos · FETs & Power MOSFETs · MPN CMD060N10

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage100V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 100V 80A 100W Surface Mount TO-252

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