Cmos CMD055N06

Cmos · FETs & Power MOSFETs · MPN CMD055N06

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)90A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)8.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

60V 90A 3V 100W 8.5mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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