Cmos CMD052N10

Cmos · FETs & Power MOSFETs · MPN CMD052N10

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Specifications

Output Capacitance(Coss)1.6nF
Pd - Power Dissipation120W
Gate Charge(Qg)60nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.6nF

Technical details

N-Channel 100V 100A 120W Surface Mount TO-252

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