Cmos CMD016N10

Cmos · FETs & Power MOSFETs · MPN CMD016N10

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

N-Channel 100V 55A 100W Surface Mount TO-252

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