Cmos CMD012N10

Cmos · FETs & Power MOSFETs · MPN CMD012N10

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)950pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 100V 60A 120W Surface Mount TO-252

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