Cmos CMB65R080SD

Cmos · FETs & Power MOSFETs · MPN CMB65R080SD

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation480W
RDS(on)70mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

650V 55A 5V 480W 70mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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