Cmos CMB200N06-7

Cmos · FETs & Power MOSFETs · MPN CMB200N06-7

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Specifications

Gate Charge(Qg)183nC
Drain to Source Voltage60V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)1.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1nF
Number1 N-channel
Input Capacitance(Ciss)8.1nF
TypeN-Channel

Technical details

60V 180A 4V 330W 1.7mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

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