Cmos · FETs & Power MOSFETs · MPN CMB029N10-7
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| Gate Charge(Qg) | 169nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 4.7nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 400W |
| RDS(on) | 2.3mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| Input Capacitance(Ciss) | 14.3nF |
| Type | N-Channel |
100V 200A 4V 400W 2.3mΩ N-Channel TO-263-7 Single FETs, MOSFETs RoHS