ChipNobo STP4N150-CN

ChipNobo · FETs & Power MOSFETs · MPN STP4N150-CN

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage1.5kV
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)100pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)5.4Ω@10V
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

N-Channel 1.5kV 3A 115W Through Hole TO-220C

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