ChipNobo SI2309CDS-T1-GE3-CN

ChipNobo · FETs & Power MOSFETs · MPN SI2309CDS-T1-GE3-CN

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)168mΩ@10V;185mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)450pF

Technical details

60V 2A 1.5W Surface Mount SOT-23

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