Chao He SS8550

Chao He · Transistors (BJTs) · MPN SS8550

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation300mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

25V 400 1 PNP PNP 1.5A SOT-23 Single Bipolar Transistors RoHS

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