CBI S8050

CBI · Transistors (BJTs) · MPN S8050

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 25V 0.5A 150MHz 0.2W Surface Mount SOT-523

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