CBI MMUN2233

CBI · Transistors (BJTs) · MPN MMUN2233

No reviews yet — be the first to review CBI MMUN2233.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor6.1kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio0.185
typeNPN
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

Related Transistors (BJTs)