CBI MMUN2212

CBI · Transistors (BJTs) · MPN MMUN2212

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain60
Operating Temperature-
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor28.6kΩ
Resistor Ratio1.2
Pd - Power Dissipation200mW

Technical details

50V 60 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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