CBI MMUN2211

CBI · Transistors (BJTs) · MPN MMUN2211

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain35
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor13kΩ
Resistor Ratio1.2
Number1 NPN (Pre-Biased)
typeNPN
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

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