CBI MMDT5451DW

CBI · Transistors (BJTs) · MPN MMDT5451DW

No reviews yet — be the first to review CBI MMDT5451DW.

Specifications

Current - Collector Cutoff50nA;50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V;150V
DC Current Gain300
Emitter-Base Voltage VEBO6V;5V
Pd - Power Dissipation200mW
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))150mV;200mV

Technical details

300 NPN+PNP 1 NPN + 1 PNP 200mA SOT-363 Single Bipolar Transistors RoHS

Related Transistors (BJTs)