CBI MMDT5401DW

CBI · Transistors (BJTs) · MPN MMDT5401DW

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
typePNP
Number2 PNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 300mW Surface Mount SOT-363

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