CBI MMDT4401DW

CBI · Transistors (BJTs) · MPN MMDT4401DW

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))750mV

Technical details

Bipolar (BJT) Transistor NPN 40V 0.6A 250MHz 0.2W Surface Mount SOT-363

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