CBI MMBTSC3356S

CBI · Transistors (BJTs) · MPN MMBTSC3356S

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)3GHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO3V
DC Current Gain250
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA

Technical details

12V 250 1 NPN NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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