CBI MMBTSC3356-7G

CBI · Transistors (BJTs) · MPN MMBTSC3356-7G

No reviews yet — be the first to review CBI MMBTSC3356-7G.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)7GHz
Collector - Emitter Voltage VCEO12V
DC Current Gain250
Emitter-Base Voltage VEBO3V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA

Technical details

Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23

Related Transistors (BJTs)