CBI MMBTRC101SS

CBI · Transistors (BJTs) · MPN MMBTRC101SS

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)200MHz
DC Current Gain30
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
Number1 NPN (Pre-Biased)
typeNPN
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V@5mA,200mV
Voltage - Input(Max)(VI(off))1V@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 200mW Surface Mount SOT-23

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