CBI EMZ1

CBI · Transistors (BJTs) · MPN EMZ1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz;140MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain560
Emitter-Base Voltage VEBO7V;6V
Pd - Power Dissipation120mW
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))400mV;500mV

Technical details

50V 560 NPN+PNP 1 NPN + 1 PNP 150mA SOT-563 Single Bipolar Transistors RoHS

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