CBI DTC123EUA

CBI · Transistors (BJTs) · MPN DTC123EUA

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain20
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor2.86kΩ
Resistor Ratio1.2
Pd - Power Dissipation200mW

Technical details

50V 20 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

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