CBI DTC114YE

CBI · Transistors (BJTs) · MPN DTC114YE

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Specifications

Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain68
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV

Technical details

50V 68 100mA 150mW 1 NPN (Pre-Biased) NPN SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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