CBI DTA114YE

CBI · Transistors (BJTs) · MPN DTA114YE

No reviews yet — be the first to review CBI DTA114YE.

Specifications

Transition frequency(fT)250MHz
DC Current Gain68
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor13kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio4.7
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 100mA 150mW Surface Mount SOT-523

Related Transistors (BJTs)