CBI DTA114ECA

CBI · Transistors (BJTs) · MPN DTA114ECA

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain-
Emitter-Base Voltage VEBO-
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation-

Technical details

50V 50mA PNP 1 PNP Pre-Biased SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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