CBI CB2324

CBI · FETs & Power MOSFETs · MPN CB2324

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Specifications

Output Capacitance(Coss)22pF
Pd - Power Dissipation350mW
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)5.8nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)234mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)190pF

Technical details

350mW 100V 1.2V 234mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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