CBI · FETs & Power MOSFETs · MPN CB2324
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| Output Capacitance(Coss) | 22pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 5.8nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| RDS(on) | 234mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
350mW 100V 1.2V 234mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS