CBI · FETs & Power MOSFETs · MPN CB2310
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| Output Capacitance(Coss) | 34pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 6nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 247pF |
350mW 60V 500mV 105mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS