CBI · FETs & Power MOSFETs · MPN CB2309
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| Output Capacitance(Coss) | 35pF |
|---|---|
| Pd - Power Dissipation | 1.56W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 8.2nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 145mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 425pF |
1.56W 60V 1.5V 145mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS