CBI · FETs & Power MOSFETs · MPN CB2305
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| Output Capacitance(Coss) | 290pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Gate Charge(Qg) | 15nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| RDS(on) | 45mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
350mW 20V 900mV 45mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS