CBI · FETs & Power MOSFETs · MPN CB2301DW
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.1A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 170mΩ@2.5V |
| Type | P-Channel |
P-Channel 20V 2.1A 0.35W Surface Mount SOT-363