CBI CB2301DW

CBI · FETs & Power MOSFETs · MPN CB2301DW

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.1A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
RDS(on)170mΩ@2.5V
TypeP-Channel

Technical details

P-Channel 20V 2.1A 0.35W Surface Mount SOT-363

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