CBI BSS123W

CBI · FETs & Power MOSFETs · MPN BSS123W

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Specifications

Gate Charge(Qg)2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)170mA
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation250mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)10Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

N-Channel 100V 0.17A 0.25W Surface Mount SOT-323

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