CBI BC858C

CBI · Transistors (BJTs) · MPN BC858C

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 200mW Surface Mount SOT-23

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