CBI BC849C

CBI · Transistors (BJTs) · MPN BC849C

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain800
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))250mV;600mV

Technical details

30V 800 1 NPN NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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