CBI BC847BVN

CBI · Transistors (BJTs) · MPN BC847BVN

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain450;475
Emitter-Base Voltage VEBO6V;5V
Pd - Power Dissipation150mW
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV;650mV

Technical details

45V NPN+PNP 1 NPN + 1 PNP 100mA SOT-563 Single Bipolar Transistors RoHS

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