CBI 2SK3019W

CBI · FETs & Power MOSFETs · MPN 2SK3019W

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation200mW
RDS(on)13Ω@2.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)13pF
TypeN-Channel

Technical details

N-Channel 30V 0.1A 0.2W Surface Mount SOT-323

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