CBI 2SD1624

CBI · Transistors (BJTs) · MPN 2SD1624

No reviews yet — be the first to review CBI 2SD1624.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain560
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation500mW;1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))350mV

Technical details

50V 560 1 NPN NPN 3A SOT-89-3L Single Bipolar Transistors RoHS

Related Transistors (BJTs)